Optical waveguides – Integrated optical circuit
Reexamination Certificate
2011-08-09
2011-08-09
Le, Uyen-Chau N (Department: 2874)
Optical waveguides
Integrated optical circuit
Reexamination Certificate
active
07995877
ABSTRACT:
An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 μm.
REFERENCES:
patent: 5297068 (1994-03-01), Guilfoyle et al.
patent: 5451767 (1995-09-01), Amano et al.
patent: 2003/0007719 (2003-01-01), Forrest et al.
S. Kodama et al, “2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator”, Electronics Letters, vol. 37, No. 19, Sep. 13, 2001, pp. 1185-1186.
S. Kodama et al, “500 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator”, Electronics Letters, vol. 40, No. 9, Apr. 29, 2004, pp. 555-556.
David A. B. Miller et al, “The Quantum Well Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation, and Self-Linearized Modulation,” IEEE Journal of Quantum Electronics, vol. QE-21, No. 9 Sep. 1985, pp. 1462-1476.
James W. Raring et al, “Design and Demonstration of Novel QW Intermixing Scheme for the Integration of UTC-Type Photodiodes with QW-Based Components”, IEEE Journal of Quantum Electronics, Feb. 2006, vol. 42, No. 2, pp. 171-181.
James W. Raring et al, “40-Gb/s Widely Tunable Transceivers”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 13, No. 1, Jan.-Feb. 2007, pp. 3-14.
Erik J. Skogen et al, “Monolithically Integrated Active Components: A Quantum-Well Intermixing Approach”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 11, No. 2, Mar./Apr. 2005, pp. 343-355.
Toshihide Yoshimatsu et al, “100-Gb/s Error-Free Wavelength Conversion with a Monolithic Optical Gate Integrating a Photodiode and Electroabsorption Modulator”, IEEE Photonics Technology Letters, 2005, vol. 17, No. 11 pp. 2367-2369.
Raring James
Skogen Erik J.
Tauke-Pedretti Anna
Hohimer John P.
Le Uyen-Chau N
Sandia Corporation
Tran Hoang
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