Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2011-03-01
2011-03-01
Hassanzadeh, Parviz (Department: 1712)
Coating apparatus
Gas or vapor deposition
With treating means
C156S345470
Reexamination Certificate
active
07895970
ABSTRACT:
A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead34is disposed in the plasma processing chamber10including a container11having a process space S for receiving a semiconductor wafer W, and a susceptor12disposed in the container11, for mounting the received semiconductor wafer W thereon. The susceptor12is connected to high-frequency power supplies20and46. An electrode support39of the gas-introducing showerhead34is electrically grounded. An electrically floating top electrode plate38of the gas-introducing showerhead34is disposed between the electrode support39and the process space S. The top electrode plate38has a surface exposed to the process space S. An insulating film48is formed of a dielectric material and disposed between the electrode support39and the top electrode plate38.
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Japanese Office Action with English translation dated Sep. 28, 2010 in Japanese Patent Application No. 2006-028982, 6 pages.
Hayami Toshihiro
Honda Masanobu
Matsui Yutaka
Chen Keath T
Hassanzadeh Parviz
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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