Seed/AFM combination for CCP GMR device

Details Seed/AFM combination for CCP GMR device Seed/AFM combination for CCP GMR device

2011-07-12

2011-07-12

Cao, Allen T (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07978440

ABSTRACT:
Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.

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The 2002 IEEE Int'l Magnetics Conf., Apr. 28-May 2, RAI Congress Center, Amsterdam, The Netherlands, Intermag Digest 2002, Takagishi CA 02, Hong CA 03, Nagasaka GA 04.

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