Copper-passivating CMP compositions and methods

Compositions – Etching or brightening compositions

Reexamination Certificate

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Reexamination Certificate

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07955520

ABSTRACT:
The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.

REFERENCES:
patent: 6409781 (2002-06-01), Wojtczak et al.
patent: 6783432 (2004-08-01), Li et al.
patent: 7071105 (2006-07-01), Carter et al.
patent: 2004/0148867 (2004-08-01), Matsumi et al.
patent: 2004/0152309 (2004-08-01), Carter et al.
patent: 2009/0090888 (2009-04-01), Chang

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