ROM semiconductor integrated circuit device having a...

Details ROM semiconductor integrated circuit device having a... ROM semiconductor integrated circuit device having a...

2011-01-11

2011-01-11

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Read only systems

Semiconductive

C365S103000, C365S072000, C365S063000, C365S051000

Reexamination Certificate

active

07869250

ABSTRACT:
In a semiconductor integrated circuit device having a volatile memory high-speed operation is enabled and the density of the memory can be enhanced. The volatile memory includes a word line, a complementary bit line having bit lines, a plurality of common source lines, and a memory cell that is coupled with the word line and the complementary bit lines. The memory cell includes transistors. The gate electrodes of the transistors are coupled with the word line, and the drain electrode of one of the transistors is coupled with one of the bit lines. The drain electrode of the other transistor is coupled with the other bit line. The respective source electrodes of the transistors are coupled with any one of the common source lines, or brought in a floating state, thereby storing storage information in the memory cell.

REFERENCES:
patent: 7102926 (2006-09-01), Lee et al.
patent: 7218544 (2007-05-01), Yamauchi
patent: 7324397 (2008-01-01), Miyazaki et al.
patent: 2003/0235096 (2003-12-01), Chen et al.
patent: 2005-327339 (2005-11-01), None

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