Thin-film patterning method for magnetoresistive device

Details Thin-film patterning method for magnetoresistive device Thin-film patterning method for magnetoresistive device

2011-03-29

2011-03-29

Deo, Duy-Vu N (Department: 1713)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200, C360S313000, C360S314000, C360S315000, C438S706000, C438S707000, C438S722000

Reexamination Certificate

active

07916432

ABSTRACT:
The thin-film patterning method for a magnetoresistive device comprises forming a functional layer on a substrate; forming a first mask layer above the functional layer; forming a patterned resist on the first mask layer; etching the first mask layer by using the resist; removing the resist; forming a second mask layer by atomic layer deposition, the second mask layer covering a step defined by an edge of the first mask layer; dry-etching the second mask layer in a thickness direction of the substrate so as to leave the second mask layer on a side face of the step; removing the first mask layer so as to expose the functional layer under the first mask; and dry-etching the functional layer by using the second mask layer.

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patent: WO 01/33558 (2001-05-01), None

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