Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-08-02
2011-08-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S095000, C257S099000, C257S100000, C257S422000, C257S434000, C257SE33056, C257SE33058, C257SE33059, C257SE33004, C257SE33068, C257SE33073, C257SE33074, C438S026000, C438S116000
Reexamination Certificate
active
07989836
ABSTRACT:
A light emitting device includes a light emitting element, including a substrate including group III nitride compound semiconductor, a luminous layer structure including group III nitride compound semiconductor, the luminous layer structure formed on a first surface of the substrate, and an irregular surface formed on a second surface of the substrate, the second surface including a principal light emission surface, and a translucent sealing member for sealing the light emitting element, the translucent sealing member being separated from the second surface. At least one of translucent gel material and an inert gas is filled between the light emitting element and the translucent sealing member.
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McGinn IP Law Group PLLC
Soward Ida M
Toyoda Gosei Co,., Ltd.
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