Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-07-12
2011-07-12
Hoang, Quoc D (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31121
Reexamination Certificate
active
07977760
ABSTRACT:
A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle θ to a direction perpendicular to the principal plane within a range of 0°<φ≦45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle α with the two plane direction within a range of 0°<α<90°.
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Mishima Ryuichi
Nakata Yasushi
Nishimura Shigeru
Tamura Seiichi
Yuzurihara Hiroshi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hoang Quoc D
Tran Tony
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