Method of forming a high performance tunneling...

Details Method of forming a high performance tunneling... Method of forming a high performance tunneling...

2011-01-04

2011-01-04

Kim, Paul D (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603070, C029S603150, C029S603180, C216S062000, C216S065000, C216S066000, C300S013000, C300S013000, C300S013000, C300S013000, C451S005000, C451S041000

Reexamination Certificate

active

07861401

ABSTRACT:
A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZwherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZlayer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2have been achieved for TMR read head applications.

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