Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-08-09
2011-08-09
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S003000, C257S050000, C257S529000, C257SE23147
Reexamination Certificate
active
07994607
ABSTRACT:
It is an object of the present invention to provide a semiconductor device mounted with a memory which can be driven in the ranges of a current value and a voltage value which can be generated from a wireless signal. It is another object to provide a write-once read-many memory into which data can be written anytime after manufacture of a semiconductor device. An antenna, an antifuse-type ROM, and a driver circuit are formed over a substrate having an insulating surface. A stacked layer of a silicon film and a germanium film is interposed between a pair of electrodes included in the antifuse-type ROM. The antifuse-type ROM having this stacked layer can reduce fluctuation in writing voltage.
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Tajima Ryota
Tokunaga Hajime
Chen Yu
Jackson, Jr. Jerome
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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