Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-04-12
2011-04-12
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185170, C365S185230, C365S185250, C365S185240
Reexamination Certificate
active
07924619
ABSTRACT:
A NAND architecture non-volatile memory device and programming process programs the various cells of strings of non-volatile memory cells by the application of differing word line pass voltages (Vpass) to the unselected word lines adjacent to the selected word line and memory cell being programmed in order to reduce voltage differences between the word lines of the memory cell string or array during a programming cycle. This allows the word line to word line voltage differential to be reduced and thus decreases the likelihood of breakdown or punch through of the insulator materials placed between the adjacent word lines.
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Hur J. H.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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