Semiconductor laser and optical integrated semiconductor device

Details Semiconductor laser and optical integrated semiconductor device Semiconductor laser and optical integrated semiconductor device

2011-05-24

2011-05-24

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular beam control device

Tuning

C372S050110, C372S050120, C372S050121, C372S050122, C372S096000, C372S102000

Reexamination Certificate

active

07949020

ABSTRACT:
A tunable distributed feedback semiconductor laser includes a substrate; an optical waveguide structure disposed on a main surface of the substrate and including an active layer and a diffraction grating, the optical waveguide structure being divided into a first DFB portion, a wavelength-tuning region, and a second DFB portion in that order; a first electrode for injecting carriers into the active layer in the first DFB portion; a second electrode for injecting carriers into the active layer in the second DFB portion; and a third electrode for supplying a wavelength tuning signal to the wavelength-tuning region. The diffraction grating extends over the first DFB portion, the wavelength-tuning region, and the second DFB portion. An optical confinement factor of the wavelength-tuning region is smaller than that of the first and second DFB portions.

REFERENCES:
patent: 5347526 (1994-09-01), Suzuki et al.
patent: 7397833 (2008-07-01), Takagi
patent: 2004/0119079 (2004-06-01), Hayakawa et al.
patent: 2007/0104242 (2007-05-01), Kudo et al.
“Wavelength Tunable DFB LD with High Coupling Coefficient Gratings”, written by Nobuhiro Nunoya et al., The collected papers of The Institute of Electronics, Information and Communication Engineers (IEICE) general Conference, C-4-20, p. 282, Mar. 20, 2007 w/English translation.

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