Wafer machining method for preparing a wafer for dicing

Details Wafer machining method for preparing a wafer for dicing Wafer machining method for preparing a wafer for dicing

2011-07-19

2011-07-19

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S460000, C257SE21599

Reexamination Certificate

active

07981770

ABSTRACT:
A wafer working method which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking the wafer. The wafer working method involves: a first machining step of grinding a reverse side of a wafer W and then polishing the reverse side of the wafer thus ground to a thickness which is larger than a finally worked wafer thickness; a modified region forming step of irradiating laser light to a region of the wafer thus subjected to the first machining which lies inwardly of a modification-free zone measuring 0.1 mm to 10 mm from a periphery of the wafer, to form a modified region inside the wafer; and a second machining step of grinding the reverse side of the wafer thus formed with the modified region and then polishing the reverse side of the wafer thus ground to the finally worked wafer thickness.

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English Translation of the International Preliminary Report on Patentability and Written Opinion of the International Searching Authority for International Application No. PCT/JP2007/053731 Dated Sep. 18, 2008.

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