Processing method and plasma etching method

Details Processing method and plasma etching method Processing method and plasma etching method

2011-03-08

2011-03-08

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S719000, C257SE21218, C257SE21231

Reexamination Certificate

active

07902078

ABSTRACT:
A processing method includes a silicon oxide etching process of performing a plasma etching on a target layer mainly made up of silicon, a silicon oxide layer formed on the target layer and a target object having a previously patterned resist layer formed on the silicon oxide layer, the plasma etching of the silicon oxide layer being performed by using the resist layer as a mask; a deposits removing process of removing deposits generated in the silicon oxide etching process and stuck to the target object; and a silicon etching process of performing a plasma etching on the target layer by a plasma generated from a processing gas containing SF6, O2and SiF4while using the silicon oxide layer as a mask.

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Japanese Office Action dated Nov. 30, 2010 with English translation.

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