Static information storage and retrieval – Powering
Reexamination Certificate
2011-04-05
2011-04-05
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Powering
C365S189090, C365S189110, C365S210100, C365S154000
Reexamination Certificate
active
07920438
ABSTRACT:
An SRAM circuit operates at a reduced operation margin, especially at a low operating voltage by increasing or optimizing the operation margin of the SRAM circuit. The threshold voltage of the produced transistor in the SRAM circuit is detected to compare the operating voltage of a memory cell with the operating voltage of a peripheral circuit in order to adjust it to the optimum value, and the substrate bias voltage is further controlled.
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A JPO computer translation of JP 06-139779.
Osada Kenichi
Yamaoka Masanao
Hur J. H.
Mattingly & Malur, P.C.
Renesas Electronics Corporation
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