Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-06-14
2011-06-14
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C356S153000
Reexamination Certificate
active
07960712
ABSTRACT:
The switching element of the present invention includes: an ion conduction layer (4) in which metal ions can move freely; a first electrode (1) that contacts the ion conduction layer (4); and a second electrode (2) that contacts the ion conduction layer (4), that is formed such that the ion conduction layer (4) is interposed between the first electrode (1) and the second electrode (2), and that supplies metal ions to the ion conduction layer (4) or that receives metal ions from the ion conduction layer (4) to cause precipitation of the metal that corresponds to the metal ions. An introduction path (5) composed of the metal and of a prescribed width is further provided on the ion conduction layer (4) for electrically connecting the first electrode (1) and the second electrode (2). The application of voltage to the first electrode (1) relative to the second electrode (2) then causes an electrochemical reaction between the introduction path (5) and the second electrode (2) whereby the electrical characteristics are switched.
REFERENCES:
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 7116573 (2006-10-01), Sakamoto et al.
patent: 2002/0168820 (2002-11-01), Kozicki et al.
patent: 2003/0138981 (2003-07-01), Yamaguchi et al.
patent: 2000-512058 (2000-09-01), None
patent: 2002-536840 (2002-10-01), None
patent: 2003-92387 (2003-03-01), None
Kawaura Hisao
Sakamoto Toshitsugu
Ida Geoffrey
Le Thao X
NEC Corporation
Sughrue & Mion, PLLC
LandOfFree
Switching element, switching element drive method and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Switching element, switching element drive method and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Switching element, switching element drive method and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2691842