Robust self-aligned process for sub-65nm...

Etching a substrate: processes – Forming or treating electrical conductor article – Forming or treating of groove or through hole

Reexamination Certificate

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C216S072000, C216S058000, C438S689000, C438S706000, C438S737000

Reexamination Certificate

active

07993535

ABSTRACT:
A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure.

REFERENCES:
patent: 6097579 (2000-08-01), Gill
patent: 6455943 (2002-09-01), Sheu et al.
patent: 6700147 (2004-03-01), Saigoh
patent: 6861177 (2005-03-01), Pinarbasi et al.
patent: 6965138 (2005-11-01), Nakajima et al.
patent: 2002/0011460 (2002-01-01), Seigler et al.
patent: 2003/0080084 (2003-05-01), Kamijima et al.
patent: 2005/0269288 (2005-12-01), Cyrille et al.
patent: 2006/0043280 (2006-03-01), Feldbaum et al.
Barros et al, Ion Milling Properties of Laterally Emitting Thin Film Elextroluminescent Materials, May 2001, IEE Transactions of Semicondutor Manufacturing, vol. 14 No. 2, pp. 173-176.
Brido et al, Thin Multilayers Characterization by Grazing X-Ray Reflectometry and Use of Fourier Transform, Jul. 2006, Applied Surface Science, vol. 253, pp. 12-16.
Vasile et al, Focused Ion Beam Milling: Depth Control for Three Dimensional Microfabrication, Nov./Dec. 2007, Journal of Vacuum Science and Technology, vol. 15 No. 6, pp. 2350-2354.
Yamauchi et al, A Pattern Edge Profile Simulation for Obliqe Ion Milling, Oct./Dec. 1984, Journal of Vacuum Science and Technology, vol. 2 No. 4, pp. 1552-1557.

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