Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-01-18
2011-01-18
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S458000, C438S795000, C257SE21032, C257SE21040
Reexamination Certificate
active
07871849
ABSTRACT:
A method for manufacturing a photoelectric conversion device typified by a solar cell, having an excellent photoelectric conversion characteristic with a silicon semiconductor material effectively utilized. The point is that the surface of a single crystal semiconductor layer bonded to a supporting substrate is irradiated with a pulsed laser beam to become rough. The single crystal semiconductor layer is irradiated with the pulsed laser beam in an atmosphere containing an inert gas and oxygen so that the surface thereof is made rough. With the roughness of surface of the single crystal semiconductor layer, light reflection is suppressed so that incident light can be trapped. Accordingly, even when the thickness of the single crystal semiconductor layer is equal to or greater than 0.1 μm and equal to or less than 10 μm, path length of incident light is substantially increased so that the amount of light absorption can be increased.
REFERENCES:
patent: 5665607 (1997-09-01), Kawama et al.
patent: 5858853 (1999-01-01), Shishiguchi et al.
patent: 6132817 (2000-10-01), Tokutake et al.
patent: 6566277 (2003-05-01), Nakagawa et al.
patent: 6692981 (2004-02-01), Takato et al.
patent: 6759284 (2004-07-01), Kang et al.
patent: 7022586 (2006-04-01), Maleville et al.
patent: 7301215 (2007-11-01), Kariya
patent: 2005/0022864 (2005-02-01), Fujioka et al.
patent: 2006/0194417 (2006-08-01), Ishihara et al.
patent: 2007/0218630 (2007-09-01), Yamaguchi et al.
patent: 2008/0099065 (2008-05-01), Ito et al.
patent: 2008/0242050 (2008-10-01), Yamazaki et al.
patent: 2008/0246109 (2008-10-01), Ohnuma et al.
patent: 1 088 913 (2001-04-01), None
patent: 07-226528 (1995-08-01), None
patent: 10-093122 (1998-04-01), None
patent: 10-335683 (1998-12-01), None
patent: 2000-077287 (2000-03-01), None
patent: 2000-150940 (2000-05-01), None
patent: 2001-160540 (2001-06-01), None
patent: 2002-100789 (2002-04-01), None
patent: 2002-348198 (2002-12-01), None
patent: 2003-017723 (2003-01-01), None
patent: 2003-258285 (2003-09-01), None
patent: 2004-014958 (2004-01-01), None
patent: 2005-050905 (2005-02-01), None
patent: 2005-268682 (2005-09-01), None
Garber Charles D
Isaac Stanetta D
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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