Method of correcting defect in photomask

Details Method of correcting defect in photomask Method of correcting defect in photomask

2011-06-07

2011-06-07

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S394000

Reexamination Certificate

active

07955760

ABSTRACT:
Disclosed herein is a method of correcting defects in photomasks. According to one embodiment, a light absorption layer is formed on a photomask where pin hole defects occur in a light blocking layer, and light absorption patterns are formed on the pin hole defect portions by selectively etching the light absorption layer. According to another embodiment, a light absorption layer is formed on a backside of a photomask having pin hole defects in a light blocking layer, and light absorption patterns are formed on the backside of the photomask substrate corresponding to a region having pin hole defects by etching the light absorption layer.

REFERENCES:
patent: 5981110 (1999-11-01), George et al.
patent: 6740456 (2004-05-01), Kanamitsu et al.
patent: 6806007 (2004-10-01), Abdo et al.
patent: 2003/0146485 (2003-08-01), Ezaki
patent: 2004/0137337 (2004-07-01), Chen
patent: 2004/0209172 (2004-10-01), Takaoka et al.
patent: 2005/0255386 (2005-11-01), Kim et al.
patent: 2006/0093925 (2006-05-01), Cheng
patent: 2006/0166107 (2006-07-01), Chen et al.
patent: 2007/0026321 (2007-02-01), Kumar
patent: 2007/0032054 (2007-02-01), Ramaswamy et al.
patent: 2007-256491 (2007-10-01), None
patent: 10-2007-0068898 (2007-07-01), None

Affiliated with

Also associated with

Rating

Method of correcting defect in photomask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of correcting defect in photomask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of correcting defect in photomask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2690883