Fabrication of channel wraparound gate structure for...

Details Fabrication of channel wraparound gate structure for... Fabrication of channel wraparound gate structure for...

2011-03-29

2011-03-29

Ahmed, Shamim (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

C438S719000

Reexamination Certificate

active

07915167

ABSTRACT:
A method for fabricating a field-effect transistor with a gate completely wrapping around a channel region is described. Ion implantation is used to make the oxide beneath the channel region of the transistor more etchable, thereby allowing the oxide to be removed below the channel region. Atomic layer deposition is used to form a gate dielectric and a metal gate entirely around the channel region once the oxide is removed below the channel region.

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