Method of manufacturing a semiconductor device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C029S831000, C029S832000, C029S739000, C029S740000

Reexamination Certificate

active

07975376

ABSTRACT:
The invention aims to provide substrate treatment equipment that can automatically collect a substrate in a normal condition without needing manual operation. The equipment includes a substrate holder26for holding substrates12in a multistage manner and a substrate transfer unit34for transferring the substrates12into the substrate holder26, wherein a substrate holding condition of the substrate holder26is sensed by a sensing section60. The sensing section60has photo-sensors64a,64b, and sensing waveforms sensed by the photo-sensors64a,64bare compared with a normal waveform. A control section66is provided, which controls a substrate transfer unit34such that substrates12other than at least a substrate12that was determined to be abnormal are transferred by the unit.

REFERENCES:
patent: 4810473 (1989-03-01), Tamura et al.
patent: 5565034 (1996-10-01), Nanbu et al.
patent: 5922126 (1999-07-01), Furukawa et al.
patent: 6092980 (2000-07-01), Kumasaka et al.
patent: 6143083 (2000-11-01), Yonemitsu et al.
patent: 6221201 (2001-04-01), Tamura et al.
patent: 6270619 (2001-08-01), Suzuki et al.
patent: 6390754 (2002-05-01), Yamaga et al.
patent: 6729041 (2004-05-01), Shindo et al.
patent: 6874515 (2005-04-01), Ishihara et al.
patent: A-61-248839 (1986-11-01), None
patent: A 6-236910 (1994-08-01), None
patent: 11-054593 (1999-02-01), None
patent: A 11-54593 (1999-02-01), None
Office Action in U.S. Appl. No. 10/570,156, issued Dec. 8, 2009.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2689742

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.