Silicon nitride substrate, method of manufacturing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

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C257S705000, C257S706000, C257S712000, C438S718000, C174S13700R, C264S647000, C361S688000

Reexamination Certificate

active

07948075

ABSTRACT:
A silicon nitride substrate having appropriately adjusted warpage and surface roughness can be obtained by mixing magnesium oxide of 3 to 4 wt % and at least one kind of rare-earth element oxide of 2 to 5 wt % with silicon nitride source material powder to form a sheet-molded body, sintering the sheet-molded body, and performing a heat treatment at a temperature of 1,550 to 1,700 degree C. with a pressure of 0.5 to 6.0 kPa with a plurality of substrates being stacked. Also, a silicon nitride circuit board and a semiconductor module using the same are provided.

REFERENCES:
patent: 2006/0170306 (2006-08-01), Takahashi et al.
patent: 2009/0039477 (2009-02-01), Kaga et al.
patent: 1 142 849 (2001-10-01), None
patent: A-61-10069 (1986-01-01), None
patent: A-61-186257 (1986-08-01), None
patent: A-11-268958 (1999-10-01), None
patent: A-2001-19555 (2001-01-01), None
patent: A-2001-335359 (2001-12-01), None
patent: A-2002-12474 (2002-01-01), None
patent: A-2002-362976 (2002-12-01), None
patent: A-2004-161605 (2004-06-01), None
patent: WO 2006/118003 (2006-11-01), None
Jun. 4, 2009 Search Report issued in European Patent Application No. 09154697.8.

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