Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2011-04-05

2011-04-05

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S204000, C257S208000, C257S241000, C257S219000, C257S357000, C257SE21615, C257SE25016, C257SE27046, C438S142000, C716S112000, C716S113000, C716S119000

Reexamination Certificate

active

07919793

ABSTRACT:
Disclosed herein is a semiconductor integrated circuit including: a plurality of standard cells including a transistor having a gate electrode and arranged in combination with each other; a metallic wiring layer interconnecting the standard cells to form a desired circuit; and a plurality of reserve cells having a gate electrode, unconnected with the metallic wiring layer and arranged on a periphery of the standard cells, wherein each of the gate electrodes of the standard cells and the reserve cells has a gate pad section and two gate finger sections extending from the gate pad section to sides opposite to each other in a predetermined direction, and length of the gate pad sections of the reserve cells in a direction orthogonal to the predetermined direction is equal to or more than a sum total value of three times a minimum line width in the metallic wiring layer and twice a minimum separation distance.

REFERENCES:
patent: 6369412 (2002-04-01), Ueda et al.
patent: 7562326 (2009-07-01), Wang et al.
patent: 2005/0044522 (2005-02-01), Maeda
patent: 2007/0111405 (2007-05-01), Watanabe et al.
patent: 2006-269900 (2006-10-01), None

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