Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-23

2011-08-23

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S532000, C257S687000, C257S692000, C257S700000, C257S723000

Reexamination Certificate

active

08004062

ABSTRACT:
A multilayer wiring layer400, a first inductor310and a second inductor320are formed on a substrate10. The multilayer wiring layer is formed by alternately stacking an insulating layer and a wiring layer in this order t or more times (t≧3). The first inductor310is provided in the nth wiring layer in the multilayer wiring layer400. The second inductor320is provided in the mth wiring layer in the multilayer wiring layer400(t≧m≧n+2) and positioned above the first inductor310. No inductor is provided in any of the wiring layers positioned between the nth wiring layer and the mth wiring layer to be positioned above the first inductor310. The first inductor310and the second inductor320constitute a signal transmitting device300which transmits an electrical signal in either of two directions.

REFERENCES:
patent: 5952849 (1999-09-01), Haigh
patent: 2009/0066457 (2009-03-01), Uchida
patent: 10-163422 (1998-06-01), None
patent: 2001-513276 (2001-08-01), None

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