Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-05-10
2011-05-10
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S154000, C438S396000, C257SE21008, C257SE21272
Reexamination Certificate
active
07939347
ABSTRACT:
A semiconductor device manufacturing method includes forming a first film made of a first metal to an upper portion of a substrate, forming a second film made of an amorphous metal oxide or an microcrystalline metal oxide on the first film, subjecting the second film to a heat treatment, subjecting the second film after the heat treatment to a reduction treatment, forming a third film made of a ferroelectric material on the second film, and forming a fourth film made of a second metal on the third film.
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Fujitsu Semiconductor Limited
Ghyka Alexander G
Nikmanesh Seahvosh J
Westerman Hattori Daniels & Adrian LLP
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