Perovskite oxide, process for producing the perovskite...

Details Perovskite oxide, process for producing the perovskite... Perovskite oxide, process for producing the perovskite...

2011-04-05

2011-04-05

Petkovsek, Daniel (Department: 2874)

Incremental printing of symbolic information

Ink jet

Ejector mechanism

C423S593100, C423S598000

Reexamination Certificate

active

07918542

ABSTRACT:
A process for producing a piezoelectric oxide having a composition (A, B, C) (D, E, F)O3, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4),in-line-formulae description="In-line Formulae" end="lead"?0.98≦TF(P)≦1.01,  (1)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?TF(ADO3)>1.0,  (2)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?TF(BEO3)<1.0, and  (3)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?TF(BEO3)<TF(CFO3)<TF(ADO3),  (4)in-line-formulae description="In-line Formulae" end="tail"?where TF(P) is the tolerance factor of the perovskite oxide, and TF(ADO3), TF(BEO3), and TF(CFO3) are respectively the tolerance factors of the compounds ADO3, BEO3, and CFO3.

REFERENCES:
patent: 3144411 (1964-08-01), Kulcsar et al.
patent: 3372121 (1968-03-01), Banno
patent: 3484377 (1969-12-01), Tsubouchi et al.
patent: 5453262 (1995-09-01), Dawson et al.
patent: 7622852 (2009-11-01), Ifuku et al.
patent: 2002/0185935 (2002-12-01), Yamamoto et al.
patent: 2003/0031622 (2003-02-01), Eitel et al.
patent: 2004/0119378 (2004-06-01), Mizuno
patent: 2004/0139911 (2004-07-01), Chiang et al.
patent: 2004/0229384 (2004-11-01), Kijima et al.
patent: 2005/0006620 (2005-01-01), Helke
patent: 1 400 498 (2004-03-01), None
patent: 2000-326506 (2000-11-01), None
patent: 3568107 (2004-09-01), None
patent: 2006-036578 (2006-02-01), None
patent: WO-03/029162 (2003-04-01), None
patent: WO-2007/034903 (2007-03-01), None
Zhai et al., “Electric fatigue in Pb(Nb, Zr, Sn, Ti)O3thin films grown by a sol-gel process”, Applied Physics Letters, vol. 83, No. 5, pp. 978-980, American Institute of Physics, Melville, NY, US, Aug. 4, 2003.
Okada et al., “Synthesis of Bi(FexA11-x)O3Thin Films by Pulsed Laser Deposition and Its Structural Characterization”, Japanese Journal of Applied Physics, vol. 43, No. 9B, pp. 6609-6612, The Japan Society of Applied Physics, Tokyo, JP, Sep. 1, 2004, XP-001229973.
Kim et al., “Influences of Cr Doping on the Electrical Properties in BiFeO3Thin Films”, Ferroelectrics Letters, vol. 33, Nos. 3-4, pp. 91-100, Taylor and Francis Inc., US, Aug. 1, 2006.
Takahashi et al., “Influence of Mn Doping on Ferroelectric-Antiferromagnet BiFeO3Thin Films Grown on (LaAlO3)0.3(Sr2AlTaO6)0.7Substrates”, Japanese Journal of Applied Physics, vol. 45, Nos. 29-32, pp. 755-757, The Japan Society of Applied Physics, Aug. 2006, XP-002530939.
Alberta et al., “High Temperature Morphotropic Phase Boundary Piezoelectrics”, IEEE Ultrasonics Symposium Proceedings, vol. 2, pp. 1991-1994, New York, NY, US, Oct. 5, 2003.
Shrout et al., “High Performance, High Temperature Perovskite Piezoelectrics”, Applications of Ferroelectrics, pp. 126-129, International Symposium on Montreal, Canada, Piscataway, NJ, USA, Aug. 23, 2004.
S. Yokoyama et al., “Compositional Dependence of Electrical Properties of Highly (100)- /(001)-Oriented Pb(Zr, Ti)O3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition”, Japanese Journal of Applied Physics, vol. 42, pp. 5922-5926, 2003.

Affiliated with

Also associated with

Rating

Perovskite oxide, process for producing the perovskite... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Perovskite oxide, process for producing the perovskite..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Perovskite oxide, process for producing the perovskite... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2688450