Reduced dark current photodetector

Details Reduced dark current photodetector Reduced dark current photodetector

2011-08-23

2011-08-23

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S189000, C257S441000, C257SE31019, C438S074000, C438S084000

Reexamination Certificate

active

08003434

ABSTRACT:
A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

REFERENCES:
patent: 4652335 (1987-03-01), Decoster et al.
patent: 4679063 (1987-07-01), White
patent: 4682196 (1987-07-01), Sakai et al.
patent: 4731640 (1988-03-01), Bluzer
patent: 6380604 (2002-04-01), Shima
patent: 7531440 (2009-05-01), Ukai
patent: 7795640 (2010-09-01), Klipstein
patent: 2002/0070389 (2002-06-01), Song
patent: 2006/0108528 (2006-05-01), Qiu
patent: 2006/0267007 (2006-11-01), Salzman et al.
patent: WO 2005/004243 (2005-01-01), None
patent: WO-2005004243 (2005-01-01), None
patent: WO-2007/107971 (2007-09-01), None
Landau et al. Quantam Mechanics, Butterworth-Heinemann; 3 edition (Jan. 1, 1981), ISBN-13: 978-0750635394.
Chen et al. Semicond. Sci. Technol. 5 (1990) S100-S102.
Maimon and Wicks, Abstract Book of 11th International Conference on Narrow Gap Semiconductors, Jun. 2003, Buffalo, N.Y.

Affiliated with

Also associated with

Rating

Reduced dark current photodetector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced dark current photodetector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced dark current photodetector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2687854