Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-01-18

2011-01-18

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Reexamination Certificate

active

07871932

ABSTRACT:
In the semiconductor device manufacturing method of the present invention, first, the emissivity of a wafer placed in a chamber is measured. Then, the fluctuation rate of a wafer physical quantity that fluctuates in association with the given thermal energy is calculated based on an estimate expression, which are obtained in advance, presenting the relationship between the thermal energy quantity emitted from the heat source for heating the wafer, wafer emissivity and the wafer physical quantity fluctuation rate and on the measured emissivity. Subsequently, the processing time for the physical quantity to be a specific value is calculated based on the calculated fluctuation rate. Then, the thermal process is conducted for the calculated processing time.

REFERENCES:
patent: 5508934 (1996-04-01), Moslehi et al.
patent: 6855916 (2005-02-01), Matthews et al.
patent: 2006-190795 (2006-07-01), None
patent: 2007-059945 (2007-03-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2687279