Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2011-05-31
2011-05-31
Tugbang, A. Dexter (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603120, C029S603130, C029S603160, C029S603180, C216S022000, C216S038000, C216S067000, C427S255700, C360S324120
Reexamination Certificate
active
07950136
ABSTRACT:
A process to manufacturing a TMR read head with improved voltage breakdown is performed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.
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“Spin Dependent Tunnel Junctions for Memory and Read-Head Applications,” by Freitas et al., IEEE Trans. on Magnetics, vol. 36, No. 58, Sep. 5, 2000, pp. 2796-2801.
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Torng Chyu-Jiuh
Wang Hui-Chuan
Zhao Tong
Ackerman Stephen B.
Headway Technologies Inc.
Saile Ackerman LLC
Tugbang A. Dexter
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