Process of making an improved AP1 layer for a TMR device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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Details

C029S603120, C029S603130, C029S603160, C029S603180, C216S022000, C216S038000, C216S067000, C427S255700, C360S324120

Reexamination Certificate

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07950136

ABSTRACT:
A process to manufacturing a TMR read head with improved voltage breakdown is performed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

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“Low-Resistance Tunnel Magnetoresistive Head,” by K. Ohashi et al., IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 5, 2000, pp. 2549-2553.
“Spin Dependent Tunnel Junctions for Memory and Read-Head Applications,” by Freitas et al., IEEE Trans. on Magnetics, vol. 36, No. 58, Sep. 5, 2000, pp. 2796-2801.
“Demonstrating a Tunneling Magneto-Resistive Read Head,” by Dian Song et al., IEEE Trans. on Magnetics, vol. 36, No. 5, Sep. 5, 2000, pp. 2545-2548.

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