Hydrazine-free solution deposition of chalcogenide films

Details Hydrazine-free solution deposition of chalcogenide films Hydrazine-free solution deposition of chalcogenide films

2011-06-14

2011-06-14

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is selenium or tellurium in elemental form

C257S040000, C257S002000

Reexamination Certificate

active

07960726

ABSTRACT:
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.

REFERENCES:
patent: 6379585 (2002-04-01), Vecht et al.
patent: 6875661 (2005-04-01), Mitzi
patent: 7094651 (2006-08-01), Mitzi et al.
patent: 7341917 (2008-03-01), Milliron et al.
“The Use of Soluble Metal-Polyselenide Complexes as Precursors to Binary and Ternary Solid Metal Selenides” by Dhingra et al., Mat. Res. Soc. Symp. Proc. vol. 180, 1990, pp. 825-830.
“Successive ionic layer adsorption and reaction (SILAR) method for the deposition of large area (˜10cm2) tin disulfide (SnS2) thin films” Sankapal et al., Materials Research Bulletin 35 (2000) pp. 2027-2035.
“Polycrystalline CdSe Films for Thin Film Transistors” Van Calster et al., Journal of Crystal Growth 86 (1988) pp. 924-928.
“Preparation of Thin-Film Transistors with Chemical Bath Deposited CdSe and CdS Thin Films” Gan et al., IEEE Transactions on Electron Devices, vol. 49, No. 1, Jan. 2002, pp. 15-18.
“Spin-Coating of MoS2Thin Films” Pütz et al., Institut für Neue Materialien—INM, Department of Coating Technology, Im Stadtwald, Geb. 43, D-66123 Saarbrücken, Germany, 6 pages, Jun. 2003.
“Solution processed CdS thin film transistors” Schön et al., Thin Solid Films 385 (2001) pp. 271-274.
“A Novel Method for the Preparation of Inorganic Sulfides and Selenides” I. Binary Materials and Group II-VI Phosphors, Davies et al., Journal of the Electrochemical Society, 147 (2), pp. 765-771 (2000).
“All-Inorganic Field Effect Transistors Fabricated by Printing” Ridley et al., Oct. 22, 1999, vol. 286, Science, pp. 746-749.
“A Method for the Clean Syntheses of Sulfides/Selenides” II. Ternary Sulfides/Selenides, Marsh et al., Journal of the Electrochemical Society, 148 (7) pp. D89-D93 (2001).
“Electrical Characterization of 2H-SnS2Single Crystals Synthesized by the Low Temperature Chemical Vapor Transport Method” Shibata et al., J. Phys. Chem. Solids vol. 52, No. 3, pp. 551-553, 1991.
“Spin-coated amorphous chalcogenide films” Chern et al., J. Appl. Phys. 52 (10), Oct. 1982, pp. 6979-6982.

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