Solar cell with epitaxially grown quantum dot material

Details Solar cell with epitaxially grown quantum dot material Solar cell with epitaxially grown quantum dot material

2011-01-04

2011-01-04

Neckel, Alexa D (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

C136S252000, C136S255000, C136S256000, C136S261000, C136S262000, C257S437000, C257S458000, C257S461000

Reexamination Certificate

active

07863516

ABSTRACT:
A monolithic semiconductor photovoltaic solar cell comprising a plurality of subcells disposed in series on an electrically conductive substrate. At least one subcell of the plurality of subcells includes an epitaxially grown self-assembled quantum dot material. The subcells are electrically connected via tunnel junctions. Each of the subcells has an effective bandgap energy. The subcells are disposed in order of increasing effective bangap energy, with the subcell having the lowest effective bandgap energy being closest to the substrate. In certain cases, each subcell is designed to absorb a substantially same amount of solar photons.

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