Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-08-23

2011-08-23

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23145, C257SE21585, C438S625000, C438S629000

Reexamination Certificate

active

08004084

ABSTRACT:
A semiconductor device includes a semiconductor wafer, a source region and a drain region formed within the semiconductor wafer, a gate electrode formed on the semiconductor wafer between the source region and the drain region, an interlayer film formed on the semiconductor wafer and the gate electrode, and a dummy floating pattern embedded into the interlayer film, having a film containing metal or a metallic compound having tensile stress or compressive stress and formed to be spaced from the semiconductor wafer and the gate electrode.

REFERENCES:
patent: 5412250 (1995-05-01), Brugge
patent: 5885857 (1999-03-01), Yamaha et al.
patent: 6225697 (2001-05-01), Iguchi
patent: 2005/0191812 (2005-09-01), Pritchard et al.
patent: 2006/0131662 (2006-06-01), Yamada et al.
patent: 11-340337 (1999-12-01), None
patent: 2006-165335 (2006-06-01), None

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