Method for manufacturing semiconductor optical device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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Details

Other Related Categories

C438S016000, C438S031000, C257S098000, C257SE21002, C257SE33067

Type

Reexamination Certificate

Status

active

Patent number

07981704

Description

ABSTRACT:
After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2film on the top of the waveguide ridge, and burying the SiO2film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2film of the waveguide ridge; the SiO2film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

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