Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-07-19
2011-07-19
Nguyen, Kimberly D (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S016000, C438S031000, C257S098000, C257SE21002, C257SE33067
Reexamination Certificate
active
07981704
ABSTRACT:
After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2film on the top of the waveguide ridge, and burying the SiO2film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2film of the waveguide ridge; the SiO2film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.
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Abe Shinji
Kawasaki Kazushige
Choudhry Mohammad
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
Nguyen Kimberly D
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