Laser irradiation apparatus, laser irradiation method, and...

Details Laser irradiation apparatus, laser irradiation method, and... Laser irradiation apparatus, laser irradiation method, and...

2011-04-05

2011-04-05

Elve, M. Alexandra (Department: 3742)

Electric heating

Metal heating

By arc

C219S121780, C219S121810

Reexamination Certificate

active

07919726

ABSTRACT:
It is an object to provide a laser irradiation apparatus for enlarging an area of a beam spot and reducing a proportion of a region with low crystallinity. It is also an object to provide a laser irradiation apparatus for enhancing throughput with a CW laser beam. Furthermore, it is an object to provide a laser irradiation method and a method for manufacturing a semiconductor device with the laser irradiation apparatus. A region melted by a first pulsed laser beam having harmonic is irradiated with a second CW laser beam. Specifically, the first laser beam has a wavelength of visible light or a shorter wavelength than that of visible light (approximately not more than 830 nm, preferably, not more than 780 nm). Since the first laser beam melts a semiconductor film, an absorption coefficient of the second laser beam to the semiconductor film increases drastically and thereby being more absorbable.

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Official Action dated Aug. 3, 2005, Singapore Patent Office, for Application No. 200307418-4.

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