Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2011-03-01
2011-03-01
Song, Matthew J (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S094000, C117S095000, C117S097000, C117S102000, C117S104000, C117S106000
Reexamination Certificate
active
07896965
ABSTRACT:
A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method involves providing a chip composite base having a substrate and a growth surface. A non-closed mask material layer is grown onto the growth surface in such a way that the mask material layer has a plurality of statistically distributed windows having varying forms and/or opening areas, a mask material being chosen in such a way that a semiconductor material of the semiconductor layer that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. A further method step is singulation of the chip composite base with applied material to form semiconductor chips. An optoelectronic semiconductor component is produced according to the method.
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Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductors GmbH
Song Matthew J
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