Method for fabricating fine pattern in photomask

Details Method for fabricating fine pattern in photomask Method for fabricating fine pattern in photomask

2011-03-22

2011-03-22

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S322000

Reexamination Certificate

active

07910268

ABSTRACT:
A method for fabricating a fine pattern in a photomask includes forming a light shielding layer over a substrate; forming a first resist layer pattern over the light shielding layer to expose the light shielding layer with a first critical dimension; forming a groove by etching the portion of the light shielding layer exposed by the first resist layer pattern to a first depth; exposing an upper surface of the light shielding layer by removing the first resist layer pattern; forming a second resist layer pattern over the exposed upper surface of the light shielding layer so that a bottom of the groove is partially exposed; and forming a light shielding layer pattern by etching the portion of the light shielding layer exposed by the second resist layer pattern to a second depth so that the substrate is exposed with a second critical dimension which is smaller than the first critical dimension.

REFERENCES:
patent: 5302477 (1994-04-01), Dao et al.
patent: 5932378 (1999-08-01), Lee
patent: 6686102 (2004-02-01), Randall et al.
patent: 6686300 (2004-02-01), Mehrotra et al.
patent: 10-2001-0004612 (2001-01-01), None

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