Semiconductor device having wiring line and manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257SE23142, C257SE21585, C257S678000, C257S733000, C257S796000, C257SE23001, C257SE23194, C257S680000, C257S686000, C257S725000, C257S790000, C438S637000

Reexamination Certificate

active

08004089

ABSTRACT:
On the lower surface of a semiconductor construct having an external connection electrode, there are formed an insulating film having a planar size greater than that of the semiconductor construct, and a metal layer and a mask metal layer having a connection pad portion in which a first opening corresponding to the external connection electrode is formed. A laser beam is applied using the mask metal layer as a mask, and a second opening is thereby formed in a part of the insulating film corresponding to the external connection electrode. Then, a connection conductor is formed to connect a wiring line to the external connection electrode via the second opening of the insulating film.

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Chinese Office Action dated Feb. 26, 2010 and English translation thereof in counterpart Chinese Application No. 200910009626.8.

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