Method of programming nonvolatile memory device

Details Method of programming nonvolatile memory device Method of programming nonvolatile memory device

2011-06-28

2011-06-28

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185330

Reexamination Certificate

active

07969786

ABSTRACT:
A method of programming nonvolatile memory devices. A program operation is performed by applying a dummy program pulse having a pulse width wider than a pulse width of a program start pulse. A program operation is performed by applying the program start pulse. It is then verified whether a program has been completed as a result of the program operation. A program operation is performed by applying a step-shaped dummy program pulse, which has a second pulse width and has been increased by a second step voltage. A program operation is performed by applying a program pulse having a first step voltage and a first pulse width. It is then verified whether a program has been completed as a result of the program operation.

REFERENCES:
patent: 6385112 (2002-05-01), Kurosaki
patent: 7558115 (2009-07-01), Joo
patent: 7630251 (2009-12-01), Hosono
patent: 1020070039720 (2007-04-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Jan. 27, 2010.

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