Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-04-26
2011-04-26
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185190, C365S201000, C365S185280, C365S184000
Reexamination Certificate
active
07933153
ABSTRACT:
The invention relates to a method for determining a set of programming conditions for a given type of charge-trapping non-volatile memory device, comprising the steps of: (a) selecting different sets of programming parameters to be applied to the corresponding number of non-volatile memory devices of said type, (b) programming said number of non-volatile memory devices by means of the sets of programming parameters, (c) determining an actual spatial charge distribution of the charge trapping layer of each of the programmed devices, (d) determining the influence of at least one of the programming parameters on the spatial charge distribution, (e) determining an optimised value for at least one of the programming parameters, (f) entering each optimized value in said sets of programming parameters and repeating steps b) to e) at least once.
REFERENCES:
patent: 5583811 (1996-12-01), Van Houldt et al.
patent: 6331953 (2001-12-01), Wang
patent: 6396741 (2002-05-01), Bloom et al.
patent: 6490204 (2002-12-01), Bloom et al.
patent: 6768165 (2004-07-01), Eitan
patent: 7508718 (2009-03-01), Furnemont
patent: 2001/0048614 (2001-12-01), Bloom et al.
patent: 2003/0002345 (2003-01-01), Avni et al.
patent: 2004/0027871 (2004-02-01), Bloom et al.
patent: 2004/0222437 (2004-11-01), Avni et al.
patent: 2005/0105333 (2005-05-01), Park et al.
patent: 2005/0237815 (2005-10-01), Lue et al.
patent: 2006/0050553 (2006-03-01), Yeh
patent: 2009/0141563 (2009-06-01), Furnemont
patent: 99/07000 (1999-02-01), None
Rosmeulen et al., “Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique,” Solid State Electronics Journal, 48:1525-1530 (2004).
Chim et al., “Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm,” Journal Applied Physics, 81(4):1993-2001 (1997).
European Search Report for EP05109600 dated Apr. 16, 2006.
Sun et al., “Effects of CHE and CHISEL Programming Operation on the Characteristics of SONOS Memory”, Solid-State and Integrated Circuits Technology, 7th International Conference on Beijing, China, IEEE, pp. 695-698 Oct. 18-21, 2004.
Gu et al., “Investigation of Programmed Charge Lateral Spread in a Two-Bit Storage Nitride Flash Memory Cell by Using a Charge Pumping Technique”, IEEE, 42nd Annual International Reliability Physics Symposium, Phoenix, AZ, Apr. 25-29, 2004, pp. 639 (2004).
European Search Report for Application No. EP 05 10 9602 dated May 15, 2006.
Hoang Huan
IMEC
McDonnell Boehnen & Hulbert & Berghoff LLP
Radke Jay
LandOfFree
Method for extracting the distribution of charge stored in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for extracting the distribution of charge stored in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for extracting the distribution of charge stored in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2679056