Method for manufacturing a solid-state image capturing...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S038000, C257SE21024, C257SE21033, C430S018000, C430S344000

Reexamination Certificate

active

07867810

ABSTRACT:
A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: forming an impurity diffusion area in a surface area of a semiconductor substrate; and forming a plurality of different impurity diffusion areas in the surface area of the semiconductor substrate, other than the impurity diffusion area constituting the photoelectric conversion section.

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