Method of fabricating multi-freestanding GaN wafer

Details Method of fabricating multi-freestanding GaN wafer Method of fabricating multi-freestanding GaN wafer

2011-08-16

2011-08-16

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S082000, C117S084000, C117S087000, C438S604000

Reexamination Certificate

active

07998272

ABSTRACT:
A method of fabricating a plurality of freestanding GaN wafers includes mounting a GaN substrate in a reactor, forming a GaN crystal growth layer on the GaN substrate through crystal growth, performing surface processing of the GaN crystal growth layer to form a GaN porous layer having a predetermined thickness on the GaN crystal growth layer, repeating the forming of the GaN crystal growth layer and the forming of the GaN porous layer a plurality of times to form a stack of alternating GaN crystal growth layers and GaN porous layers on the GaN substrate, and cooling the stack such that the GaN layers self-separate to form the freestanding GaN wafers. The entire process of forming a GaN porous layer and a thick GaN layer is performed in-situ in a single reactor. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN surface processing and growth proceed using an HVPE process gas such that costs are greatly reduced. In particular, since GaN is self-separated from the substrate through cooling, a GaN wafer of good quality without the occurrence of cracks can be produced on a large scale with a high yield.

REFERENCES:
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6447604 (2002-09-01), Flynn et al.
patent: 6468347 (2002-10-01), Motoki et al.
patent: 6579359 (2003-06-01), Mynbaeva et al.
patent: 6586778 (2003-07-01), Gehrke et al.
patent: 6924159 (2005-08-01), Usui et al.
patent: 7118934 (2006-10-01), Oshima et al.
patent: 7462893 (2008-12-01), Han et al.
patent: 2002/0078881 (2002-06-01), Cuomo et al.
patent: 2002/0111044 (2002-08-01), Linthicum et al.
patent: 2003/0114017 (2003-06-01), Wong et al.
patent: 2004/0183090 (2004-09-01), Kitaoka et al.
patent: 2004/0206967 (2004-10-01), Oshima et al.
patent: 2005/0023544 (2005-02-01), Shibata
patent: 2005/0093003 (2005-05-01), Shibata
patent: 2005/0093008 (2005-05-01), Suehiro et al.
patent: 2005/0208687 (2005-09-01), Kasai et al.
patent: 2006/0097353 (2006-05-01), Motoki et al.
patent: 2007/0082465 (2007-04-01), Song et al.
patent: 2007/0092980 (2007-04-01), Han et al.
patent: 2007/0141813 (2007-06-01), Song
U.S. Appl. No. 11/545,520, filed Oct. 11, 2006, Jai-Yong Han et al., Samsung Electronics Co., Ltd.
U.S. Appl. No. 11/545,518, filed Oct. 11, 2006, In-Jae Song et al., Samsung Electronics Co., Ltd.
Li et al., In-plane bandgap control in porous GaN through electroless wet chemical etching (vol. 80, No. 6, Feb. 11, 2002, Applied Physics Letters).
Mynbaeva et al., Strain relaxation in GaN Layers grown on porous GaN sublayers (MRS Internet J. Nitride Semicond. Res. 4, 14(1999)).
Oshima et al., Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation(Jpn. J. Appl. Phys. vol. 42 (2003) pp. L1-L3 Part 2, No. 1A/B, Jan. 15, 2003).

Affiliated with

Also associated with

Rating

Method of fabricating multi-freestanding GaN wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating multi-freestanding GaN wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating multi-freestanding GaN wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2677759