Substrate processing apparatus inspection method and method...

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

Reexamination Certificate

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C134S026000, C438S014000, C438S689000, C438S706000, C438S734000

Reexamination Certificate

active

07871471

ABSTRACT:
It is intended to prevent an increase in the quantity of particles on a test-piece substrate having undergone processing executed at a low temperature equal to or lower than 0° C. In an inspection method adopted when inspecting the state inside a processing chamber by measuring the quantity of particles on a test-piece substrate, i.e., a test-piece wafer, the test-piece wafer W having undergone a specific type of test processing inside the processing chamber is carried out into a transfer chamber via a loadlock chamber after holding it in the loadlock chamber over a predetermined length of time while delivering a dried inert gas into the loadlock chamber. The predetermined length of time is set to a value at which the increase in the quantity of particles on the test-piece wafer can be kept down at least within an acceptable range.

REFERENCES:
patent: 2003/0022512 (2003-01-01), Saito et al.
patent: 2003/0207579 (2003-11-01), Rattner et al.
patent: 2004/0222383 (2004-11-01), Kawakami
patent: 2005/0045276 (2005-03-01), Patel et al.
patent: 2005/0090927 (2005-04-01), Tanaka et al.
patent: 2006-179528 (2006-07-01), None

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