Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S514000, C438S717000, C438S755000

Reexamination Certificate

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07923375

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a photo-resist pattern above a first film, implanting a predetermined dopant that increases an etching rate of the first film into the first film using the photo-resist pattern as a mask, thereby forming an implantation layer in the first film, and etching a first portion of the first film, which is at least a part of the implantation layer, using the photo-resist pattern as a mask.

REFERENCES:
patent: 5266157 (1993-11-01), Kadomura
patent: 5607868 (1997-03-01), Chida et al.
patent: 6140168 (2000-10-01), Tan et al.
patent: 6774043 (2004-08-01), Yamaguchi et al.
patent: 2006/0051965 (2006-03-01), Edelberg et al.
patent: 2006/0115990 (2006-06-01), Seino et al.
patent: 2006-140222 (2006-06-01), None

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