Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Reexamination Certificate
2011-05-24
2011-05-24
Epps, Georgia Y (Department: 2878)
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
C250S239000, C257S457000, C257S458000
Reexamination Certificate
active
07947941
ABSTRACT:
In one example, an optical detector includes a photosensitive layer, and a group of additional layers associated with that photosensitive layer. The group of additional layers may include first and second contact layer configured for electrical communication with the photosensitive layer. In this example, one of the group of layers is shaped so as to define a corner whose radius of curvature is greater than about 2 microns.
REFERENCES:
patent: 5710442 (1998-01-01), Watanabe et al.
patent: 5883988 (1999-03-01), Yamamoto et al.
patent: 6281561 (2001-08-01), Stiebig et al.
patent: 6630402 (2003-10-01), Hshieh et al.
patent: 2002/0140004 (2002-10-01), Tian et al.
patent: 2003/0213984 (2003-11-01), Berezin et al.
patent: 2006/0071229 (2006-04-01), Guenter
patent: 2007/0023799 (2007-02-01), Boettiger
Author Unknown, “What Are Optical Chips,” http://orca.st.usm.edu/˜jsanchez/whatare.htm, Printed Sep. 6, 2006, pp. 1-4.
Author Unknown, “InP-based low dark-current 1.55um photodiodes,” http://www.nanotechnology.bilkent.edu.tr/research%20areas/documents/InP—based.html, Printed Sep. 6, 2006, pp. 1-2.
Author Unknown, “A Prime on Photodiode Technology,” http://home.sandiego.edu/˜ekim/photodiode/pdtech.html, Printed Sep. 6, 2006, pp. 1-15.
Author Unknown, “Structure and technology of the PIN SiGe photodetector,” Materials Science and Engineering B89 (2002), p. 77.
Chiu et al., “Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs,” Appl. Phys. Lett. 71, (17), Oct. 27, 1997, pp. 2508-2510.
Lin et al., “Demonstration of a Novel On-fiber Photodetector for On-line Power Monitoring and All-fiber Spectrometer Applications,” University Paper, Dept. of EECS, Henry Samueli School of Engineering, University of California, Irvine CA (Dec. 15-19, 2003).
Epps Georgia Y
Finisar Corporation
Maschoff Gilmore & Israelsen
Wyatt Kevin
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