Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-07-26
2011-07-26
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S072000, C257SE21413, C438S034000, C438S587000
Reexamination Certificate
active
07985969
ABSTRACT:
A field-effect transistor including an electrically conductive substrate; a first insulating film coating the electrically conductive substrate; a gate electrode disposed on the electrically conductive substrate with the first insulating film interposed therebetween; a source electrode; a drain electrode opposing the source electrode with the channel therebetween; a second insulating film covering the gate electrode; and a semiconductor layer having a width larger than a width of the gate electrode in the channel width direction and being partly provided on the gate electrode with the second insulating film interposed therebetween so that the gate electrode, the second insulating film, and the semiconductor layer are laminated in the channel.
REFERENCES:
patent: 3612758 (1971-10-01), Evans et al.
patent: 5075674 (1991-12-01), Katayama et al.
patent: 5414283 (1995-05-01), den Boer et al.
patent: 5981973 (1999-11-01), Matsuzaki et al.
patent: 6274884 (2001-08-01), Lee et al.
patent: 6476418 (2002-11-01), Shiga et al.
patent: 6664569 (2003-12-01), Moon
patent: 6797982 (2004-09-01), Okada et al.
patent: 6911666 (2005-06-01), Voutsas
patent: 2004/0195568 (2004-10-01), Okumura
patent: 9-179106 (1997-07-01), None
patent: 9-211499 (1997-08-01), None
Izumi Nozomu
Mori Hideo
Ukigaya Nobutaka
Yoshinaga Hideki
Canon Kabushiki Kaisha
Fahmy Wael M
Fitzpatrick ,Cella, Harper & Scinto
Ingham John C
LandOfFree
Transistor and display and method of driving the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor and display and method of driving the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor and display and method of driving the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2673508