Semiconductor memory device with volatile memory and non-volatil

Details Semiconductor memory device with volatile memory and non-volatil Semiconductor memory device with volatile memory and non-volatil

1991-08-12

1993-11-16

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

365149, 36512905, 365203, 307530, 257298, 257315, H01L 2968, G11C 1134

Patent

active

052629864

ABSTRACT:
A semiconductor memory device has memory cells where each cell is constructed with a volatile memory and a non-volatile memory. The semiconductor memory device has a non-volatile memory initializing mode in which the data in the non-volatile memory is erased and a temporary latch by a sense amplifier of data in the volatile memory is done during the nonvolatile memory initializing mode. Initialization of the non-volatile memory is achieved by injecting electrons into the non-volatile memory. If sufficient electrons are present in the non-volatile memory when the non-volatile memory initializing mode is required, it is not necessary to inject electrons. After the non-volatile memory is initialized, new data is written to the non-volatile memory via the volatile memory by injecting holes into the non-volatile memory in an EEPROM mode.

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Y. Yamauchi et al., "A Novel Nuram CELL . . . ," Technical Digest International Electronc Devices Meeting 1988 San Francisco, Calif. Dec. 11-14, 1988.

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