Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2011-04-26

2011-04-26

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S698000, C257S700000, C257S702000, C257S751000, C257S758000, C257S776000, C257S775000, C257SE23168

Reexamination Certificate

active

07932606

ABSTRACT:
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

REFERENCES:
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patent: 2004/0084777 (2004-05-01), Yamanoue et al.
patent: 2004/0152334 (2004-08-01), Ohto et al.
patent: 2004/0222529 (2004-11-01), Dostalik et al.
patent: 2005/0001323 (2005-01-01), Watanabe et al.
patent: 1499626 (2004-05-01), None
patent: 2003-124307 (2003-04-01), None
patent: 2003-163265 (2003-06-01), None
patent: 2004-221275 (2004-08-01), None

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