Non-volatile memory

Details Non-volatile memory Non-volatile memory

2011-05-03

2011-05-03

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185160, C365S185190, C365S185270

Reexamination Certificate

active

07936607

ABSTRACT:
A non-volatile memory includes a plurality of cells on a substrate of a first conductivity type, each cell including a portion of the substrate, a control gate, a charge-storing layer between the portion of the substrate and the control gate, and two S/D regions of a second conductivity type in the portion of the substrate. A circuit provides a first voltage to the substrate and a second voltage to both S/D regions of each cell, wherein the difference between the first and second voltages is sufficient to cause band-to-band tunneling hot holes. The circuit also provides a voltage to the control gate and the period of applying the voltages are controlled such that the threshold voltages of all the cells converge in a tolerable range.

REFERENCES:
patent: 7120059 (2006-10-01), Yeh
patent: 7170795 (2007-01-01), Lee
patent: 2005/0270849 (2005-12-01), Lue
patent: 2007/0087482 (2007-04-01), Yeh et al.
patent: 2009/0233431 (2009-09-01), Shukuri

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