Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-08-09
2011-08-09
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S128000, C438S130000, C257S004000, C430S314000
Reexamination Certificate
active
07993957
ABSTRACT:
A process forms a phase change memory cell using a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.
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Bez Roberto
Pellizzer Fabio
Tosi Marina
Zonca Romina
Blakely , Sokoloff, Taylor & Zafman LLP
Goodwin David
Loke Steven
Micro)n Technology, Inc.
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