Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2011-08-09
2011-08-09
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE21523, C257S619000, C257S758000, C438S113000, C438S458000, C438S462000
Reexamination Certificate
active
07994613
ABSTRACT:
A semiconductor device may include a chip including a chip including a silicon substrate having a semiconductor device area, a pad area and a scribe lane defining an outer contour of the chip. A semiconductor device may be formed in the semiconductor device area, and a pad electrically connected with the semiconductor device may be formed in the pad area. A crack prevention pattern may be formed on an outer contour of the chip, such that the crack prevention pattern extends from a lowest portion to a highest portion of the semiconductor device. A crack prevention pattern is manufactured such that chip cracking can be prevented during the sawing process.
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Chu Chris
Dongbu Hi-Tek Co., Ltd.
Sherr & Vaughn, PLLC
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